Datasheet Summary
HFP2N60S
March 2014
HFP2N60S
600V N-Channel MOSFET
BVDSS = 600 V RDS(on) typ ȍ ID = 2.0 A
Features
- Originative New Design
- Superior Avalanche Rugged Technology
- Robust Gate Oxide Technology
- Very Low Intrinsic Capacitances
- Excellent Switching Characteristics
- Unrivalled Gate Charge : 6.0 nC (Typ.)
- Extended Safe Operating Area
- Lower RDS(ON) ȍ7S#9GS=10V
- 100% Avalanche Tested
TO-220
1 2 3
1.Gate 2. Drain 3....
