2N60DS
2N60DS is N-Channel Super Junction Power MOSFET manufactured by PINGWEI.
- Part of the 2N60S comparator family.
- Part of the 2N60S comparator family.
FEATURE
- 2A,600V,RDS(ON)MAX=2.2Ω@VGS=10V/1A
- Low gate charge
- Low Ciss
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
TO-220AB 2N60S
ITO-220AB 2N60FS
TO-262 2N60HS
TO-263 2N60BS
TO-252 2N60GS
TO-251 2N60DS
Absolute Maximum Ratings(TC=25℃,unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current(Note1) Single Pulse Avalanche Energy (Note 2) Avalanche Current(Note1) Repetitive Avalanche Energy (Note1) Reverse Diode d V/dt (Note 3) Operating Junction and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8"from case for 5 seconds
VDSS VGSS
ID IDM EAS IAR EAR dv/dt TJ,TSTG
Mounting Torque
6-32 or M3 screw
2N60(F,B,H,G,D)S
600 ±30 2 6 45 1 0.06 15 -55 to +150
10 1.1
UNIT
A m J A m J V/ns ℃ ℃ lbf- in N- m
Thermal Characteristics
Parameter
Thermal resistance , Junction to Case
Thermal resistance , Channel to Case
Thermal resistance , Channel to Ambient
Maximum Power Dissipation
TC=25℃
Version1.0-2015.2
Symbol
Rth(J-c) Rth(ch-c)...
