2N60 Key Features
- RDS(ON) ≤ 5.0 Ω @ VGS = 10V, ID =1.0A
- Fast switching capability
- Avalanche energy specified
- Improved dv/dt capability, high ruggedness
- SYMBOL
- ORDERING INFORMATION
- Tape Reel
- Tape Reel
- MARKING
| Manufacturer | Part Number | Description |
|---|---|---|
| ROUM ROUM |
2N60 | 2A 600V N-channel Enhancement Mode Power MOSFET |
HAOHAI |
2N60 | N-Channel MOSFET |
Inchange Semiconductor |
2N60 | TO-251 N-Channel MOSFET |
Nell Power Semiconductor |
2N60 | N-Channel Power MOSFET |
| yecheng technology yecheng technology |
2N60 | N-Channel Power MOSFET |