Unisonic Technologies 2N60
2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient AC to DC converters and bridge circuits.| Part No. | 2N60 |
|---|---|
| Datasheet | 2N60 Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) ≤ 5.0 Ω @ VGS = 10V, ID =1.0A * Fast switching capability * Avalanche energy specified * Improved dv/dt capability, high ruggedness Power MOSFET● SYMBOL Copyright © 2021 Unisonic Technologies Co., Ltd 1 of 7 QW-R502-053.AB 2N60 Power MOSFET
● ORDERING INFORMATION Ordering Number Lead Free Halogen Free Package 2N60L-TA3-T 2N60G-TA3-T TO-220 2N60L-TF1-T 2N60G-TF1-T TO-220F1 2N60L-TF2-T 2N60G-TF2-T TO-220F2 2N60L-TF3-T 2N60G-TF3-T TO-220F 2N60L-TF3T-T 2N60G-TF3T-T TO-220F3 2N60L-TM3-T 2N60G-TM3-T TO-251 2N60L-TMA-T 2N60G-TMA-T TO-251L 2N60L-TMS-T 2N60G-TMS-T TO-251S 2N60L-TMS2-T 2N60G-TMS2-T TO-251S2 2N60L-TMS4-T 2N60G-TMS4-T TO-251S4 2N60L-TN3-R 2N60G-TN3-R TO-252 2N60L-TND-R 2N60G-TND-R TO-252D 2N60L-T2Q-T 2N60G-T2Q-T TO-262 2N60L-T60-K 2N60G-T60-K TO-126 2N60L-T6C-K 2N60G-T6C-K TO-126C 2N60L-T6S-K 2N60G-T6S-K TO-126S 2N60L-P5060-R 2N60G-P5060-R PDFN5×6 Note: Pin Assignment: G: Gate D: Drain S: Source Pin Assignment 12345678 Packing GDS - - - -...
