Datasheet4U Logo Datasheet4U.com
Unisonic Technologies logo

2N60 Datasheet

Manufacturer: Unisonic Technologies
2N60 datasheet preview

2N60 Details

Part number 2N60
Datasheet 2N60_UTC.pdf
File Size 273.38 KB
Manufacturer Unisonic Technologies
Description N-CHANNEL MOSFET
2N60 page 2 2N60 page 3

2N60 Overview

The UTC 2N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in power supplies, PWM motor controls, high efficient AC to DC converters and bridge circuits.

2N60 Key Features

  • RDS(ON) ≤ 5.0 Ω @ VGS = 10V, ID =1.0A
  • Fast switching capability
  • Avalanche energy specified
  • Improved dv/dt capability, high ruggedness
  • SYMBOL
  • ORDERING INFORMATION
  • Tape Reel
  • Tape Reel
  • MARKING

Similar Datasheets

Brand Logo Part Number Description Manufacturer
ROUM 2N60 2A 600V N-channel Enhancement Mode Power MOSFET ROUM
HAOHAI Logo 2N60 N-Channel MOSFET HAOHAI
INCHANGE Logo 2N60 TO-251 N-Channel MOSFET INCHANGE

2N60 Distributor

More datasheets by Unisonic Technologies

See all Unisonic Technologies parts

Datasheet4U Logo
Since 2006. D4U Semicon. About Datasheet4U Contact Us Privacy Policy Purchase of parts