Unisonic Technologies 2N60-F
2N60-F is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.| Part No. | 2N60-F |
|---|---|
| Datasheet | 2N60-F Download |
| Manufacturer |  Unisonic Technologies |
| Description | N-CHANNEL MOSFET |
| Buy | Stock & Price |
DESCRIPTION
The UTC●
FEATURES
* RDS(ON) ≤ 5.0 Ω @ VGS=10V, ID=1.0A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness● SYMBOL 2.Drain 1 TO-251 1 TO-252 1.Gate 3.Source
● ORDERING INFORMATION Note: Ordering Number Lead Free Halogen Free 2N60L-TM3-T 2N60G-TM3-T 2N60L-TN3-R 2N60G-TN3-R Pin Assignment: G: Gate D: Drain S: Source Package TO-251 TO-252 Pin Assignment 123 GDS GDS 2N60G-TM3-T (1)Packing Type (1) T: Tube, R: Tape Reel (2)Package Type (2) TM3: TO-251, TN3: TO-252 Packing Tube Tape Reel (3)Green Package (3) G: Halogen Free and Lead Free, L: Lead Free
● MARKING Lot Code UTC 2N60 1 L: Lead Free G: Halogen Free Date Code Copyright © 2020 Unisonic Technologies Co., Ltd 1 of 7 QW-R205-489.B 2N60-F Power MOSFET
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ABSOLUTE MAXIMUM RATINGS
(TC = 25°C, unless otherwise specified) PARAMETER SYMBOL RATINGS UNIT Drain-Source Voltage Gate-Source Voltage Drain Current Continuous Pulsed (Note 2) Avalanche Energy Single Pulsed (Note 3) Peak Diode...
