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2N60-F - N-CHANNEL MOSFET

General Description

The UTC 2N60-F is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics.

Key Features

  • S.
  • RDS(ON) ≤ 5.0 Ω @ VGS=10V, ID=1.0A.
  • Fast switching capability.
  • Avalanche energy tested.
  • Improved dv/dt capability, high ruggedness.
  • SYMBOL 2.Drain 1 TO-251 1 TO-252 1.Gate 3.Source.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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UNISONIC TECHNOLOGIES CO., LTD 2N60-F 2A, 600V N-CHANNEL POWER MOSFET Power MOSFET  DESCRIPTION The UTC 2N60-F is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche characteristics. This power MOSFET is usually used at high speed switching applications in switching power supplies and adaptors.  FEATURES * RDS(ON) ≤ 5.0 Ω @ VGS=10V, ID=1.0A * Fast switching capability * Avalanche energy tested * Improved dv/dt capability, high ruggedness  SYMBOL 2.Drain 1 TO-251 1 TO-252 1.Gate 3.