2N6075A Datasheet | onsemi

2N6071A/B Series Preferred Device Sensitive Gate Triacs Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications, such as light dimmers, motor controls, heating controls and power supplies; or wherever full-wave silicon gate controlled solid-state devices are needed. Triac type thyristors switch from a blocking to a conducting state for either polarity of applied anode voltage with positive or negative gate triggering. - Sensitive Gate Triggering Uniquely patible for Direct Coupling to TTL, HTL, CMOS and Operational Amplifier Integrated Circuit Logic Functions - Gate Triggering 4 Mode - 2N6071A,B, 2N6073A,B, 2N6075A,B - Blocking Voltages to 600 Volts - All Diffused and Glass Passivated Junctions for Greater Parameter Uniformity and Stability - Small, Rugged, Thermopad Construction for Low Thermal Resistance, High Heat Dissipation and Durability - Device Marking: Device Type, e.g., 2N6071A, Date Code MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating - Peak Repetitive Off-State Voltage(1) (TJ = 40 to 110°C, Sine Wave, 50 to 60 Hz, Gate Open) 2N6071A,B 2N6073A,B 2N6075A,B Symbol VDRM, VRRM 200 400 600 IT(RMS) ITSM I2t PGM PG(AV) VGM TJ Tstg - 4.0 30 3.7 10 0.5 5.0 - 40 to +110 - 40 to +150 8.0 Amps Amps A2s Watts Watt Volts 1 2 3 Value Unit Volts http://onsemi. TRIACS 4 AMPERES RMS 200 thru 600 VOLTS MT2 G MT1 - 3 - On-State RMS Current (TC = 85°C) Full Cycle Sine Wave 50 to 60 Hz - Peak Non- repetitive Surge Current (One Full cycle, 60 Hz, TJ = +110°C) Circuit Fusing Considerations (t = 8.3 ms) - Peak Gate Power (Pulse Width ≤ 1.0 µs, TC = 85°C) - Average Gate Power (t = 8.3 ms, TC = 85°C) - Peak Gate Voltage (Pulse Width ≤ 1.0 µs, TC = 85°C) - Operating Junction Temperature Range - Storage Temperature Range Mounting Torque...