2N60 Datasheet (PDF) Download
Inchange Semiconductor
2N60

Key Features

  • Drain Current ID= 2A@ TC=25℃
  • Drain Source Voltage- : VDSS= 600V(Min)
  • Static Drain-Source On-Resistance : RDS(on) = 5.0Ω(Max)
  • 100% avalanche tested
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation
2N60 datasheet preview

Datasheets by Manufacturer

Part Number Manufacturer Description
2N6066 Unknown Manufacturer PNP GERMANIUM POWER TRANSISTORS
2N6079 Seme LAB Bipolar NPN Device
2N6043 SavantIC Silicon NPN Power Transistors
2N60HS PINGWEI N-Channel Super Junction Power MOSFET
2N60FS PINGWEI N-Channel Super Junction Power MOSFET
2N6087 Semiconductor Technology Silicon Dual Differential Amplifier Transistors
2N6090 Semiconductor Technology Silicon Dual Differential Amplifier Transistors
2N6085 Semiconductor Technology Silicon Dual Differential Amplifier Transistors
2N6083 SSM VHF Communications Transistor
2N6030 SavantIC Silicon PNP Power Transistor