2N60 Key Features
- Fast Switching
- Low ON Resistance(Rdson≤4.5Ω)
- Low Gate Charge(Typ:8nC)
- Low Reverse Transfer Capacitances(Typ:3.8pF)
- 100% Single Pulse Avalanche Energy Test
- 100% ΔVDS Test
- Part: 2N60
- Description: 2A 600V N-channel Enhancement Mode Power MOSFET
- Manufacturer: ROUM
- Size: 1.44 MB
Other 2N60 Datasheets
| Manufacturer | Part Number | Description |
|---|---|---|
HAOHAI |
2N60 | N-Channel MOSFET |
Inchange Semiconductor |
2N60 | TO-251 N-Channel MOSFET |
Unisonic Technologies |
2N60 | N-CHANNEL MOSFET |
Nell Power Semiconductor |
2N60 | N-Channel Power MOSFET |
| yecheng technology yecheng technology |
2N60 | N-Channel Power MOSFET |