FMMDT5451 Datasheet | Jiangsu Changjiang Electronics

.Data Sheet.co.kr JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-06C Plastic-Encapsulate Transistors TRANSISTOR WBFBP-06C (2×2×0.5) unit: mm DESCRIPTION PNP and NPN Epitaxial Silicon Transistor Features plementary Pair z One 5551-Type NPN, One 5401-Type PNP z Ultra-Small Surface Mount Package z APPLICATION Ideal for Medium Power Amplification and Switching For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) MARKING: KNM KNM E1,B1,C1=NPN 5551 Section E2,B2,C2=PNP 5401 Section 5551 MAXIMUM RATINGS- TA=25℃ unless otherwise noted Symbol VCBO VCEO VEBO IC PC RθJA TJ Tstg Parameter Value 180 160 6 0.2 0.15 625 150 -55-150 Units V V V A W K/W Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature range ℃ ℃ 5401 MAXIMUM RATINGS- TA=25℃ unless otherwise noted Symbol VCBO VCEO VEBO IC PC RθJA TJ Tstg Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Dissipation Thermal Resistance, Junction to Ambient Junction Temperature Storage Temperature range Parameter Value -160 -150 -5 -0.2 Units V V V A 625 150 -55-150 K/W ℃ ℃ Datasheet pdf - http://..net/ .Data Sheet.co.kr ELECTRICAL CHARACTERISTICS（Tamb=25℃ Parameter Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO h FE（1） h FE（2） h FE（3） Test unless otherwise MIN 180 160 6 specified） TYP MAX UNIT V V V 50 50 conditions Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Ic=100µA,IE=0 Ic=1m A, IB=0 IE= 10µA, IC=0 VCB= 120V VEB= 4V, IC=0 VCE= 5 V, VCE= 5 V, VCE= 5 V, IC= 1 m A IC = 10 m A IC= 50 m A IE=0 n A n A 80 80 30 0.15 0.2 1 1 100 300 6 8 V V MHz p F d B 250 DC current gain Collector-emitter saturation...