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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
WBFBP-03B Plastic-Encapsulate Transistors
C WBFBP-03B
(1.2×1.2×0.5) unit: mm
2SC2715M TRANSISTOR
DESCRIPTION NPN Epitaxial planar Silicon Transistor
TOP
B
1. BASE
E C
FEATURES High power gain: Gpe=27dB(f=10.7MHz) Recommended for FM IF,OSC Stage and AM CONV.IF Stage APPLICATION High Frequency amplifier For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) MARKING: RR,RO,RY C
2. EMITTER 3.