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2SC2715M - TRANSISTOR

General Description

1.

Key Features

  • High power gain: Gpe=27dB(f=10.7MHz) Recommended for FM IF,OSC Stage and AM CONV. IF Stage.

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Datasheet Details

Part number 2SC2715M
Manufacturer Jiangsu Changjiang
File Size 146.30 KB
Description TRANSISTOR
Datasheet download datasheet 2SC2715M Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD WBFBP-03B Plastic-Encapsulate Transistors C WBFBP-03B (1.2×1.2×0.5) unit: mm 2SC2715M TRANSISTOR DESCRIPTION NPN Epitaxial planar Silicon Transistor TOP B 1. BASE E C FEATURES High power gain: Gpe=27dB(f=10.7MHz) Recommended for FM IF,OSC Stage and AM CONV.IF Stage APPLICATION High Frequency amplifier For portable equipment:(i.e. Mobile phone,MP3, MD,CD-ROM, DVD-ROM, Note book PC, etc.) MARKING: RR,RO,RY C 2. EMITTER 3.