The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
2SC2715
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process)
2SC2715
High Frequency Amplifier Applications
Unit: mm
· High power gain: Gpe = 2dB (typ.) (f = 10.7 MHz) · Recommended for FM IF, OSC stage and AM CONV. IF stage.
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB PC Tj Tstg
Rating
35 30 4 50 10 150 125 -55~125
Unit
V V V mA mA mW °C °C
Electrical Characteristics (Ta = 25°C)
JEDEC
―
JEITA
SC-59
TOSHIBA
2-3F1A
Weight: 0.012 g (typ.
2SC2715 Datasheet
