| Overview |
2SC2715
TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process)
2SC2715
High Frequency Amplifier Applications
Unit: mm
· High power gain: Gpe = 2dB (typ.) (f = 10.7 MHz) · Recommended fo.
12 V, IC = 2 mA
VCE (sat) VBE
IC = 10 mA, IB = 1 mA IC = 10 mA, IB = 1 mA
fT Cob Cc・rbb’
Gpe
VCE = 10 V, IC = 1 mA VCB = 10 V, IE = 0, f = 1 MHz VCE = 10 V, IE = -1 mA, f = 30 MHz VCC = 6 V, IE = -1 mA, f = 10.7 MHz (Figure 1)
Note: hFE classification R: 40~80, O: 70~140, Y: 120~240
Min Typ. M.
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