2SC2710
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
For Audio Amplifier Applications
Unit: mm
- High DC current gain: h FE (1) = 100~320
- plementary to 2SA1150
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB PC Tj Tstg
Rating
35 30 5 800 160 300 150 -55~150
Unit
V V V m A m A m W °C °C
Electrical Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage
DC current gain
Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance
ICBO
VCB = 35 V, IE = 0
IEBO
VEB = 5 V, IC = 0
V (BR) CEO IC = 10 m A, IB = 0 h FE (1) (Note)
VCE = 1 V, IC = 100 m A h FE (2) VCE (sat)
VBE f T Cob
VCE = 1 V, IC = 700 m A IC = 500 m A,...
