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KHB9D0N50P1 - (KHB9D0N50F1 / KHB9D0N50P1) High Voltage MOSFETs

Download the KHB9D0N50P1 datasheet PDF. This datasheet also covers the KHB9D0N50F1 variant, as both devices belong to the same (khb9d0n50f1 / khb9d0n50p1) high voltage mosfets family and are provided as variant models within a single manufacturer datasheet.

Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for electronic ballast and switching mode power supplies.

Features

  • VDSS(Min. )= 500V, ID= 9A Drain-Source ON Resistance : RDS(ON)=0.8 @VGS =10V Qg(typ. ) =34.6nC K M L J D N N P H 1 2 3 DIM.

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Note: The manufacturer provides a single datasheet file (KHB9D0N50F1_KECsemiconductor.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number KHB9D0N50P1
Manufacturer KEC
File Size 105.13 KB
Description (KHB9D0N50F1 / KHB9D0N50P1) High Voltage MOSFETs
Datasheet download datasheet KHB9D0N50P1 Datasheet

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Full PDF Text Transcription

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www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. KHB9D0N50P1/F1 N CHANNEL MOS FIELD EFFECT TRANSISTOR A O C F E G B Q I FEATURES VDSS(Min.)= 500V, ID= 9A Drain-Source ON Resistance : RDS(ON)=0.8 @VGS =10V Qg(typ.) =34.6nC K M L J D N N P H 1 2 3 DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B 1.3+0.1/-0.05 C _ 0.1 D 0.8 + _ 0.2 E 3.6 + _ 0.1 F 2.8 + 3.7 G H 0.5+0.1/-0.05 1.5 I _ 0.3 13.08 + J K 1.46 _ 0.1 1.4 + L _ 0.1 1.27+ M _ 0.2 2.54 + N _ 0.2 4.5 + O _ 0.2 2.4 + P _ 0.2 9.2 + Q 1. GATE 2. DRAIN 3.
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