KHB9D0N50P1 Overview
Description
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies.
Key Features
- Repetitive Avalanche Energy (Note
- Peak Diode Recovery dv/dt (Note
- SOURCE RthJC RthCS RthJA 0.93 0.5 62.5 2.86 62.5 /W /W /W TO-220IS D * : Drain current limited by maximum junction temperature. G S
