KEC 7D0N65F1
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies.| Part No. | 7D0N65F1 |
|---|---|
| Datasheet | 7D0N65F1 Download |
| Manufacturer |  KEC |
| Description | KHB7D0N65F1 |
| Buy | Stock & Price |
GENERAL DESCRIPTION
KHB7D0N65P1/F1 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB7D0N65P1 A O C F E G B Q IFEATURES
VDSS=650V, ID=7A Drain-Source ON Resistance : RDS(ON)=1.4 @VGS=10V K M L J D N N P Qg(typ.)= 32nC H MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 ) SYMBOL VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg 160 1.28 150 -55 150 N DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B 1.3+0.1/-0.05 C _ 0.1 D 0.8 + _ 0.2 E 3.6 + _ 0.1 F 2.8 + 3.7 G H 0.5+0.1/-0.05 1.5 I _ 0.3 13.08 + J K 1.46 _ 0.1 1.4 + L _ 0.1 1.27+ M _ 0.2 2.54 + N _ 0.2 4.5 + O _ 0.2 2.4 + P _ 0.2 9.2 + Q 1 2 3 RATING KHB7D0N65P1 KHB7D0N65F1 650 30 7 4.2 28 212 1.6 4.5 52 0.42 7* 4.2* 28* UNIT V V 1. GATE 2. DRAIN 3. SOURCE TO-220AB KHB7D0N65F1 A A F O C mJ mJ V/ns W W/ E G P B K L J D M M H Q Maximu...
