GENERAL DESCRIPTION
FEATURES
VDSS=650V, ID=7A Drain-Source ON Resistance : RDS(ON)=1.4 @VGS=10V Qg(typ.)= 32nC wwMwA.DXaItMaSUheMetR4UA.cToImNG (Tc=25 ) CHARACTERISTIC RATING SYMBOL KHB7D0N65F1 UNIT KHB7D0N65P1 KHB7D0N65F2 Drain-Source Voltage Gate-Source Voltage VDSS VGSS 650 V 30 V @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 Maximum Junction Temperature Storage Temperature Range Thermal Characteristics ID IDP EAS EAR dv/dt PD Tj Tstg 7 7* 4.2 4.2* 28 28* 212 1.6 4.5 160 52 1.28 0.42 150 -55 150 A mJ mJ V/ns W W/ Thermal Resistance, Junction-to-Case RthJC 0.78 Thermal Resistance, Case-to-Sink RthCS 0.5 Thermal Resistance, Junction-to-Ambient RthJA 62.5 * : Drain current limited by maximum junction temperature. PIN CONNECTION 2.4 /W - /W 62.5 /W D G 2007. 5. 10 S Revision No : 0 Q KHB7D0N65P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB7D0N65P1 A E I K M D NN F G B Q L J O C P H 123 1.
KEC
