KEC BAV99
SILICON EPITAXIAL PLANAR DIODE
| Part No. | BAV99 |
|---|---|
| Datasheet | BAV99 Download |
| Manufacturer |  KEC |
| Description | SILICON EPITAXIAL PLANAR DIODE |
| Buy | Stock & Price |
FEATURES
Small Package : SOT-23. Low Forward Voltage : VF=0.9V(Typ.). Fast Reverse Recovery Time : trr=1.6ns(Typ.). Small Total Capacitance : CT=0.9pF(Typ.). Suffix U : Qualified to AEC-Q101. ex) BAV99-RTK/HU MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Maximum (Peak) Reverse Voltage VRM 85 Reverse Voltage VR 80 Continuous Forward Current IF 250 Surge Current (10ms) IFSM 2 Power Dissipation 225* PD 300** Junction Temperature Tj 150 Storage Temperature Range Tstg -55 150 * Note1 : Package Mounted On FR-5 Board (25.4 19.05 1.57mm) ** Note2 : Package Mounted On 99.5% Alumina (10 8 0.6mm) UNIT V V mA A mW A G H D E L B L 2 3 1 Unit : mm DIM MILLIMETERS A 2.93 ± 0.20 B 1.30+0.20/-0.15 C 1.0+0.3/-0.1 D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 G 1.90 ± 0.10 H 0.95 ± 0.10 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 L 0.55 ± 0.10 M 0.20 MIN N 1.00+0.20/-0.10 C N K J M 1. CATHODE 1 2. ANODE 2 3. ANODE 1 / CATHODE 2 SOT-23 3 2 1 Marking Type Name H8 Lot No.ELECTRICAL CHARACTERISTICS
(Ta=25 ) CHARACTERISTIC...
