KEC BAV99C
SILICON EPITAXIAL PLANAR DIODE
| Part No. | BAV99C |
|---|---|
| Datasheet | BAV99C Download |
| Manufacturer |  KEC |
| Description | SILICON EPITAXIAL PLANAR DIODE |
| Buy | Stock & Price |
FEATURES
Small Package : SOT-23(1). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Reverse Voltage Continuous Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range VR 80 IF 100 IFSM 1 PD 225* Tj 150 Tstg -55 150 * Note1 : Package Mounted On FR-5 Board (25.4 19.05 1.57mm) UNIT V mA A mW BAV99C SILICON EPITAXIAL PLANAR DIODE A G D C N K J E L BL 23 1 M 1. CATHODE 1 2. ANODE 2 3. ANODE 1 / CATHODE 2 DIM MILLIMETERS A 2.90+_ 0.1 B 1.30+0.20/-0.15 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 G 1.90 J 0.10 K 0.00 ~ 0.10 L 0.55 M 0.20 MIN N 1.00+0.20/-0.10 3 21 SOT-23(1) Marking Type Name H8C Lot No.ELECTRICAL CHARACTERISTICS
(Ta=25 ) CHARACTERISTIC Reverse Voltage Forward Voltage Reverse Current Total Capacitance SYMBOL VR VF(1) VF(2) VF(3) IR CT TEST CONDITION IR=100uA IF=1mA IF=10mA IF=150mA VR=80V VR=0, f=1MHz MIN. 80 - TYP. - 0.61 0.74 - MAX. - 0.65 0.8 1.25 0.5 4 UNIT V V A pF 2015. 5. 12 Revision No : 0 1/2 FORWARD CURRENT I F (m...