• Part: BAW56C
  • Description: SILICON EPITAXIAL PLANAR DIODE
  • Manufacturer: KEC
  • Size: 344.80 KB
Download BAW56C Datasheet PDF
BAW56C page 2
Page 2

Datasheet Summary

SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION. Features Small Package : SOT-23(1). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Maximum (Peak) Reverse Voltage Reverse Voltage Continuous Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range VRM VR IF IFSM PD Tj Tstg 85 80 200 2 225- 150 -55 150 - Note1 : Package Mounted On FR-5 Board (25.4 19.05 1.57mm) UNIT V V mA A mW SILICON EPITAXIAL PLANAR DIODE E L BL 23 1 M 1. CATHODE 1 2. CATHODE 2 3. ANODE DIM MILLIMETERS A 2.90+_ 0.1 B 1.30+0.20/-0.15 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 G 1.90 J 0.10 K 0.00 ~ 0.10 L 0.55 M 0.20 MIN N...