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SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES Small Package : SOT-23(1).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage Reverse Voltage Continuous Forward Current Surge Current (10ms) Power Dissipation Junction Temperature Storage Temperature Range
VRM VR IF IFSM PD Tj Tstg
85 80 200 2 225* 150 -55 150
* Note1 : Package Mounted On FR-5 Board (25.4 19.05 1.57mm)
UNIT V V mA A mW
BAW56C
SILICON EPITAXIAL PLANAR DIODE
A G
D
E L BL
23 1
M 1. CATHODE 1 2. CATHODE 2 3. ANODE
DIM MILLIMETERS A 2.90+_ 0.1 B 1.30+0.20/-0.15 C 1.30 MAX D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 G 1.90 J 0.10 K 0.00 ~ 0.10 L 0.55 M 0.20 MIN N 1.00+0.20/-0.10
3
21
SOT-23(1)
C N K J
Marking
H6CType Name
Lot No.
BAW56C Datasheet
