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SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES
Small Package
: ESM.
Low Forward Voltage
: VF=0.92V (Typ.).
Fast Reverse Recovery Time : trr=1.6ns(Typ.).
Small Total Capacitance : CT=2.2pF (Typ.).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage
VRM
85
Reverse Voltage
VR 80
Continuous Forward Current
IF 150
Surge Current (10ms)
IFSM
2
Power Dissipation
PD 200 *
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
Note : * Package Mounted On FR-5 Board (25.4 19.05 1.57mm)
UNIT V V mA A mW
C
A G H
BAW56T
SILICON EPITAXIAL TYPE DIODE
E B
2 13
DIM MILLIMETERS
D
A 1.60+_ 0.10 B 0.85+_ 0.10
C 0.70+_ 0.10
D 0.27+0.10/-0.05 E 1.60+_ 0.10 G 1.00+_ 0.10
H 0.50 J 0.13+_ 0.05
J
1.
BAW56T Datasheet
