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SEMICONDUCTOR
TECHNICAL DATA
GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION.
FEATURES Complementary to BC807W.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Emitter Current
VCBO VCEO VEBO
IC IE
50 45 5 500 -500
Collector Power Dissipation
PC 100
Junction Temperature
Tj 150
Storage Temperature Range
Tstg -55 150
UNIT V V V mA mA mW
A J G
BC817W
EPITAXIAL PLANAR NPN TRANSISTOR
C L
E MB 2 1
NK
M
DIM MILLIMETERS
DA B
2.00+_ 0.20 1.25+_ 0.15
C 0.90+_ 0.10 3
D 0.3+0.10/-0.05
E 2.10 +_ 0.20
G 0.65
H 0.15+0.1/-0.06
J 1.30
K 0.00~0.10
L HM
0.70 0.42
N 0.10 MIN N
1. EMITTER 2. BASE 3.
BC817W Datasheet
