K3519PQ-XH - Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor

KEC

General Description

The K3519PQ-XH is a Dual N-channel MOSFET designed for use as a bi-directional load switch, facilitated by its common-drain configuration.

Key Features

¡⁄ Low on-state resistance RDS(ON)1 = 16m.
MAX (VGS=4.5V, IS=1.0A) RDS(ON)2 = 17m.
MAX (VGS=3.9V, IS=1.0A) RDS(ON)3 = 20m.
MAX (VGS=3.5V, IS=1.0A) S1 S2 1080 G1 G2 BOTTOM : COMMON DRAIN _10 180 +.

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K3519PQ-XH common-drain dual n-channel enhancement mode field effect transistor by KEC - Datasheet Preview

Datasheet Details

Part number	K3519PQ-XH
Manufacturer	KEC
File Size	72.87 KB
Description	Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet	K3519PQ-XH Datasheet

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SEMICONDUCTOR TECHNICAL DATA General Description The K3519PQ-XH is a Dual N-channel MOSFET designed for use as a bi-directional load switch, facilitated by its common-drain configuration. K3519PQ-XH www.DataSheet4U.com Common-Drain Dual N-Channel Enhancement Mode Field Effect Transistor 2000 FEATURES ¡⁄ Low on-state resistance RDS(ON)1 = 16m¥ MAX (VGS=4.5V, IS=1.0A) RDS(ON)2 = 17m¥ MAX (VGS=3.9V, IS=1.0A) RDS(ON)3 = 20m¥ MAX (VGS=3.5V, IS=1.0A) S1 S2 1080 G1 G2 BOTTOM : COMMON DRAIN _10 180 + MAXIMUM RATING (Ta=25¡ CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Storage Temperature Range Unless otherwise noted) RATING 24 ¡ -55¡› 12 150 ¡ UNIT V V SYMBOL VDSS VGSS Tstg Equivalent Circuit D D G1 Rg G2 Rg S1 S2 2010. 4.