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SEMICONDUCTOR
TECHNICAL DATA
For high speed switching circuit. For small current rectification.
FEATURES Low Forward Voltage : VF=0.55V(Max). IO=200mA recification possible.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
VR
Average Forward Current
IO
Forword Surge Current
IFSM
Power Dissipation
PD
Junction Temperature
Tj
Storage Temperature
Tstg
* Mounted on a glass epoxy circuit board of 20 pad dimension of 4
RATING 30 200 1 150* 125
-40 125
UNIT V mA A mW
CATHODE MARK B A
GG
KDR720E
SCHOTTKY BARRIER TYPE DIODE
CE 1
2 D
1. ANODE 2. CATHODE
F
DIM A B C D E F G
MILLIMETERS 1.60 +_0.10 1.20 +_0.10 0.80 +_0.10 0.30+_ 0.05 0.60+_ 0.10 0.13+_ 0.05 0.20+_ 0.
KDR720E Datasheet
