Datasheet Summary
SEMICONDUCTOR
TECHNICAL DATA
For high speed switching circuit. For small current rectification.
Features
Low Forward Voltage : VF=0.55V(Max). IO=200mA recification possible.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
Average Forward Current
Forword Surge Current
IFSM
Power Dissipation
Junction Temperature
Tj
Storage Temperature
Tstg
- Mounted on a glass epoxy circuit board of 20 pad dimension of 4
RATING 30 200 1 150- 125
-40 125
UNIT V mA A mW
CATHODE MARK B A
SCHOTTKY BARRIER TYPE DIODE
CE 1
2 D
1. ANODE 2. CATHODE
DIM A B C D E F G
MILLIMETERS 1.60 +_0.10 1.20 +_0.10 0.80 +_0.10 0.30+_ 0.05 0.60+_ 0.10 0.13+_ 0.05 0.20+_...