The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SEMICONDUCTOR
TECHNICAL DATA
For high speed switching circuit. For small current rectification.
FEATURES Low Forward Voltage : VF=0.55V(Max). IO=200mA recification possible.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage
VR
Average Forward Current
IO
Forword Surge Current
IFSM
Power Dissipation
PD
Junction Temperature
Tj
Storage Temperature
Tstg
* Mounted on a glass epoxy circuit board of 20 pad dimension of 4
RATING 30 200 1 150* 125
-40 125
UNIT V mA A mW
CATHODE MARK B A
GG
KDR720E
SCHOTTKY BARRIER TYPE DIODE
CE 1
2 D
1. ANODE 2. CATHODE
F
DIM A B C D E F G
MILLIMETERS 1.60 +_0.10 1.20 +_0.10 0.80 +_0.10 0.30+_ 0.05 0.60+_ 0.10 0.13+_ 0.05 0.20+_ 0.
KDR720E Datasheet
