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SEMICONDUCTOR
TECHNICAL DATA
LOW VOLTAGE HIGH SPEED SWITCHING.
FEATURES Low Forward Voltage : VF(4)=0.43V(Typ.) IO=200mA rectification possible. Small Package : USC.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL RATING
Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms) Power Dissipation
VRM VR IFM IO IFSM PD
30 30 300 200 1 200*
Junction Temperature
Tj 125
Storage Temperature Range
Tstg -55 125
* : Mounted on a glass epoxy circuit board of 20 20mm,
pad dimension of 4 4mm.
UNIT V V mA mA A mW
KDR729
SCHOTTKY BARRIER TYPE DIODE
CATHODE MARK E A K
F L
B 1
2 D
MM 1. ANODE 2. CATHODE
G
H
J C I
DIM MILLIMETERS A 2.50+_ 0.2 B 1.25+_ 0.05 C 0.90+_ 0.05 D 0.30 +_ 0.06 E 1.70 +_ 0.05 F 0.27 +_ 0.10 G 0.126+_ 0.
KDR729 Datasheet
