KEC KDS184
Silicon Epitaxial Planar Diode
FEATURES
● Small Package : SOT-23.● Low Forward Voltag : VF=0.9V(Typ.).
● Fast Reverse Recovery Time : trr=1.6ns(Typ.).
● Small Total Capacitance : CT=0.9pF(Typ.).
● Suffix U : Qualified to AEC-Q101 ex) KDS184-RTK/HU MAXIMUM RATING (Ta=25℃) CHARACTERISTIC SYMBOL Maximum (Peak) Reverse Voltage VRM Reverse Voltage VR Maximum (Peak) Forward Current IFM Average Forward Current IO Surge Current (10ms) IFSM Power Dissipation PD Junction Temperature Tj Storage Temperature Range Tstg Note : *Unit Rating. Total Rating=Unit Rating x 1.5 RATING 85 80 300 * 100 * 2* 150 150 -55 ~ 150 UNIT V V mA mA A mW ℃ ℃ A G H D C N K J E LB L 2 3 1 M Unit : mm DIM MILLIMETERS A 2.93 ± 0.20 B 1.30+0.20/-0.15 C 1.0+0.3/-0.1 D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 G 1.90 ± 0.10 H 0.95 ± 0.10 J 0.13+0.10/-0.05 K 0.00 ~ 0.10 L 0.55 ± 0.10 M 0.20 MIN N 1.00+0.20/-0.10 1. ANODE 1 2. ANODE 2 3. CATHODE SOT-23 3 2 1 Marking B3 Type Name Lot No.
ELECTRICAL CHARACTERISTICS
(Ta=25℃) CHARACTERISTIC SYMBOL TEST CONDITION Forwa...