• Part: KDS181
  • Description: SILICON EPITAXIAL PLANAR DIODE
  • Manufacturer: KEC
  • Size: 518.95 KB
Download KDS181 Datasheet PDF
KDS181 page 2
Page 2

Datasheet Summary

SEMICONDUCTOR TECHNICAL DATA ULTRA HIGH SPEED SWITCHING APPLICATION. Features Small Package : SOT-23. Low Forward Voltag : VF=0.92V(Typ.). Fast Reverse Recovery Time : trr=1.6ns(Typ.). Small Total Capacitance : CT=2.2pF(Typ.). MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Maximum (Peak) Reverse Voltage Reverse Voltage Maximum (Peak) Forward Current Average Forward Current Surge Current (10ms) IFSM Power Dissipation Junction Temperature Tj Storage Temperature Range Tstg Note : - Unit Rating. Total Rating=Unit Rating x 1.5 RATING 85 80 - 100 - 2- 150 150 -55 150 UNIT V V mA mA A mW SILICON EPITAXIAL PLANAR DIODE E L BL DIM MILLIMETERS A...