Small Package : SOT-23. Low Forward Voltag : VF=0.92V(Typ. ). Fast Reverse Recovery Time : trr=1.6ns(Typ. ). Small Total Capacitance : CT=2.2pF(Typ. ).
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SEMICONDUCTOR
TECHNICAL DATA
ULTRA HIGH SPEED SWITCHING APPLICATION.
FEATURES Small Package : SOT-23. Low Forward Voltag : VF=0.92V(Typ.). Fast Reverse Recovery Time : trr=1.6ns(Typ.). Small Total Capacitance : CT=2.2pF(Typ.).
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Maximum (Peak) Reverse Voltage
VRM
Reverse Voltage
VR
Maximum (Peak) Forward Current
IFM
Average Forward Current
IO
Surge Current (10ms)
IFSM
Power Dissipation
PD
Junction Temperature
Tj
Storage Temperature Range
Tstg
Note : *Unit Rating. Total Rating=Unit Rating x 1.5
RATING 85 80
300 * 100 * 2* 150 150 -55 150
UNIT V V mA mA A mW
KDS181
SILICON EPITAXIAL PLANAR DIODE
E L BL
DIM MILLIMETERS A 2.93+_ 0.20
B 1.30+0.20/-0.15
A G H
D
23
C 1.30 MAX D 0.40+0.15/-0.05
E 2.40+0.30/-0.20 1 G 1.
KDS181 Datasheet
