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KDS181-RTR - Silicon Epitaxial Planar Diode

Key Features

  • Low forward voltage : V F(3) = 0.92 V(Typ) Fast reverse recovery time : t rr = 1.6ns (MAX. ) Small total capacitance : CT = 2.2pF(Typ) +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 1.Base 2.Emitter 3.collector Absolute Maximum Ratings Ta = 25 Parameter Maximum (peak) reverse voltage Reverse voltage Average forward current Maximum (peak) forward current Surge current (10 ms) Power.

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SMD Type Silicon Epitaxial Planar Diode KDS181-RTR Diodes Features Low forward voltage : V F(3) = 0.92 V(Typ) Fast reverse recovery time : t rr = 1.6ns (MAX.) Small total capacitance : CT = 2.2pF(Typ) +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 1.Base 2.Emitter 3.