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KDV240E - Silicon Diode

Key Features

  • Low Tuning Voltage : VT=3V. High Capacitance Ratio : C0.5V/C3V=2.6(Min. ) Excellent C-V Characteristics, and Small Tracking Error.

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Datasheet Details

Part number KDV240E
Manufacturer KEC
File Size 354.83 KB
Description Silicon Diode
Datasheet download datasheet KDV240E Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SEMICONDUCTOR TECHNICAL DATA ANTENNA TUNNING APPLICATION FEATURES Low Tuning Voltage : VT=3V. High Capacitance Ratio : C0.5V/C3V=2.6(Min.) Excellent C-V Characteristics, and Small Tracking Error. MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Voltage Junction Temperature Storage Temperature Range VR Tj Tstg RATING 10 125 -55 125 UNIT V KDV240E VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE CATHODE MARK B A C 1 2 D 1. ANODE 2. CATHODE E F DIM A B C D E F MILLIMETERS 1.60 +_0.10 1.20 +_0.10 0.80 +_0.10 0.30+_ 0.05 0.60+_ 0.10 0.13+_ 0.05 ESC Marking Type Name TL ELECTRICAL CHARACTERISTICS (Ta=25 ) CHARACTERISTIC SYMBOL Reverse Current Capacitance Capacitance Ratio IR C0.5V C1.5V C3V C0.5V/C3V Series Resistance rS TEST CONDITION VR=22V VR=0.