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SEMICONDUCTOR
TECHNICAL DATA
VCO FOR C/P, CB PLL
FEATURES Low Series Resistance : 0.6 (Max.) High Capacitance Ratio : 1.7(Min.) 2.2(Max.)
KDV251M/S
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage Junction Temperature
VR Tj
Storage Temperature Range
Tstg
RATING 12 150
-55 150
UNIT V
CLASSIFICATION OF CAPACITANCE RATIO GRADE
GRADE
CAPACITANCE RATIO (C1.6V/C5V)
NONE
1.70 2.20
A 1.70 1.82
B 1.80 1.92
C 1.90 2.020
D 2.00 2.12
E 2.10 2.20
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage Reverse Current Capacitance Capacitance Capacitance Ratio
VR IR C1.6V C5V C1.6V/C5V
Series Resistance
rS
TEST CONDITION IR=10 A VR=9V VR=1.6V, f=1MHz VR=5V, f=1MHz
VR=1V, f=50MHz
2002. 6.
KDV251M Datasheet
