KDV202E
KDV202E is SILICON EPITAXIAL PLANAR DIODE manufactured by KEC.
SEMICONDUCTOR
TECHNICAL DATA
FM RADIO BAND TUNING APPLICATION.
Features
High Capacitance Ratio : C0.2V/C2.3V =2.5(Min.) Low Series Resistance : rs=0.6 (Max.) Small Package : ESC.
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC Reverse Voltage Junction Temperature Storage Temperature Range
SYMBOL VR Tj Tstg
RATING 6 150
-55 150
UNIT V
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
CATHODE MARK B A
C 1
2 D
1. ANODE 2. CATHODE
DIM A B C D E F
MILLIMETERS 1.60+_ 0.10 1.20+_ 0.10 0.80+_ 0.10 0.30+_ 0.05 0.60+_ 0.10 0.13+_ 0.05
Marking
Type Name
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Current Capacitance Capacitance Ratio
IR1 IR2 C0.2V C2.3V C0.2V/C2.3V
Series Resistance r S
TEST CONDITION VR=6V VR=6V, Tj=85 VR=0.2V, f=1MHz VR=2.3V, f=1MHz
CT=30p F, f=100MHz
CLASSIFICATION OF CAPACITANCE RATIO...
