VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV Tuning
Full PDF Text Transcription (Reference)
The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SEMICONDUCTOR
TECHNICAL DATA
VCO FOR UHF/VHF BAND.
FEATURES Good C-V Linearity. Low Series Resistance. Small Package : TFSC.
KDV365F
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
CATHODE MARK 21
CE DF
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage Junction Temperature Storage Temperature Range
VR Tj Tstg
RATING 15 150
-55 150
UNIT V
B A
1. ANODE 2. CATHODE
DIM A B C D E F
MILLIMETERS 1.00+_ 0.05
0.80+0.10/-0.05 0.60+_ 0.05 0.30+_ 0.05
0.40 MAX 0.13+_ 0.05
Marking
Type Name
TFSC
K
ELECTRICAL CHARACTERISTICS (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Current
Capacitance Capacitance Ratio Series Resistance
IR1 IR2 C1V C4V C1V/C4V rS
ESD Capability *
* Failure criterion : IR 20nA at VR=10V.
KDV365F Datasheet
