KDV365F Key Features
- 55 150
- Failure criterion : IR 20nA at VR=10V
- 27.05 6.05 3.0
- MAX. 10 100
KDV365F is SILICON EPITAXIAL PLANAR DIODE manufactured by KEC.
| Part Number | Description |
|---|---|
| KDV368F | SILICON EPITAXIAL PLANAR DIODE |
| KDV300E | Silicon Diode |
| KDV301E | Silicon Diode |
| KDV302E | Silicon Diode |
| KDV310E | VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV Tuning |
SEMICONDUCTOR TECHNICAL DATA VCO FOR UHF/VHF BAND.