VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE TV Tuning
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SEMICONDUCTOR
TECHNICAL DATA
VCO FOR UHF/VHF BAND.
FEATURES Good C-V Linearity. Low Series Resistance. : rS=1.1 Small Package : TFSC.
(Max.)
KDV368F
VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE
CATHODE MARK 21
CE DF
MAXIMUM RATING (Ta=25 )
CHARACTERISTIC
SYMBOL
Reverse Voltage Junction Temperature Storage Temperature Range
VR Tj Tstg
RATING 10 150
-55 150
UNIT V
B A
1. ANODE 2. CATHODE
DIM A B C D E F
MILLIMETERS 1.00+_ 0.05
0.80+0.10/-0.05 0.60+_ 0.05 0.30+_ 0.05
0.40 MAX 0.13+_ 0.
KDV368F Datasheet
