KEC KF10N60F
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies.| Part No. | KF10N60F |
|---|---|
| Datasheet | KF10N60F Download |
| Manufacturer |  KEC |
| Description | N CHANNEL MOS FIELD EFFECT TRANSISTOR |
| Buy | Stock & Price |
GENERAL DESCRIPTION
FEATURES
VDSS=600V, ID=10A Drain-Source ON Resistance : RDS(ON)(Max)=0.69 Qg(typ.)= 29.5nC @VGS=10V D N N A KF10N60P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR KF10N60P O C F E G B Q I K M L J H P DIM MILLIMETERS _ 0.2 9.9 + A B C D E F G H I J K L M N 15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + 1.46 _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 0.2 4.5 + _ 0.2 2.4 + _ 0.2 9.2 + MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 ) RATING SYMBOL KF10N60P VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg 190 1.52 150 -55 150 D NN H UNIT KF10N60F 600 30 10 6 25 400 16.5 4.5 50 0.4 10* 6* 25* A V V O 1 2 3 1. GATE 2. DRAIN 3. SOURCE P Q TO-220AB KF10N60F A F C mJ mJ V/ns W W/ K O B E G DIM MILLIMETERS Maximum J...
