KF17N50N
KF17N50N is N-CHANNEL MOS FIELD EFFECT TRANSISTOR manufactured by KEC.
Description
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies.
N CHANNEL MOS FIELD EFFECT TRANSISTOR
Features
VDSS(Min.)= 500V, ID= 17A Drain-Source ON Resistance : RDS(ON)=0.35(Max.) Qg(typ.) =41n C @VGS =10V d D E
MAXIMUM RATING (Tc=25
CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage Drain Current @TC=25¡É Pulsed Single Pulsed Avalanche Energy Repetitive Avalanche Energy Peak Diode Recovery dv/dt Drain Power Dissipation Tc=25¡É
)
SYMBOL VDSS VGSS ¡¾ ID (Note1) (Note 2) (Note 1) (Note 3) IDP EAS EAR dv/dt PD Tj Tstg RATING 500 30 17 A 45 870 22.5 4.5 223 1.79 150 ¡É ¡É -55¡- 150 m J m J V/ns W W/¡É UNIT V V
1. Gate 2. Drain 3. Source
DIM MILLIMETERS _ 0.20 A 15.60 + _ 0.20 B 4.80 + _ 0.20 C 19.90 + _ 0.20 D 2.00 + _ 0.20 d 1.00 + _ 0.20 E 3.00 + _ 0.20 3.80 + F _ 0.20 G 3.50 + _ 0.20 H 13.90 + _ 0.20 I 12.76 + _ 0.20 J 23.40 + K 1.5+0.15-0.05 _ 0.30 L 16.50 + _ 0.20 M 1.40 + _ 0.20 13.60 + N _ 0.20 9.60 + O _ 0.30 P 5.45 + _ 0.10 Q 3.20 + _ 0.20 R 18.70 + 0.60+0.15-0.05 T
F C J I G
TO-3P(N)-E
Derate above25¡É
Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient
Rth JC Rth JA
0.54 ¡É ¡É 40
/W /W
Marking
KF17N50
N 801
1 2
PRODUCT NAME LOT NO
..net
2008. 10. 2 Revision No : 1 1/6
ELECTRICAL CHARACTERISTICS (Tc=25
CHARACTERISTIC
)
TEST CONDITION MIN. TYP. MAX....
