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KF17N50N - N-CHANNEL MOS FIELD EFFECT TRANSISTOR

Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for switching mode power supplies.

Features

  • VDSS(Min. )= 500V, ID= 17A Drain-Source ON Resistance : RDS(ON)=0.35(Max. ) Qg(typ. ) =41nC @VGS =10V d D E M P P T 1 2 3.

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Datasheet Details

Part number KF17N50N
Manufacturer KEC semiconductor
File Size 84.41 KB
Description N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet KF17N50N Datasheet
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Full PDF Text Transcription

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SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies. H KF17N50N N CHANNEL MOS FIELD EFFECT TRANSISTOR A N O Q B K FEATURES VDSS(Min.)= 500V, ID= 17A Drain-Source ON Resistance : RDS(ON)=0.35(Max.) Qg(typ.
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