GENERAL DESCRIPTION
FEATURES
VDSS=200V, ID=19A Drain-Source ON Resistance : RDS(ON)(Max)=0.155 @VGS=10V Qg(typ.)= 21nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Gate-Source Voltage VDSS VGSS 200 30 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 ID IDP EAS EAR dv/dt PD 19* 12* 45* 215 4.9 4.5 43.1 0.34 Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Tj Tstg 150 -55 150 Thermal Resistance, Junction-to-Case RthJC 2.9 Thermal Resistance, Junction-to-Ambient RthJA 62.5 * : Drain current limited by maximum junction temperature. UNIT V V A mJ mJ V/ns W W/ /W /W Q AC F O K E LM D NN 123 G B J R H 1. GATE 2. DRAIN 3. SOURCE DIM MILLIMETERS A 10.16 +_ 0.2 B 15.87 +_ 0.2 C 2.54 +_ 0.2 D 0.8 +_ 0.1 E 3.18 +_ 0.1 F 3.3 +_ 0.1 G 12.57 +_ 0.2 H 0.5 +_ 0.1 J 13.0 +_ 0.5 K 3.23 +_ 0.1 L 1.47 MAX M 1.47 MAX N 2.54 +_ 0.2 O 6.68 +_ 0.2 Q 4.7 +_ 0.2 R 2.76 +_ 0.2 *Single Gauge Lead Frame TO-220IS (1) PIN CONNECTION D G S 2014.
KEC
