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KF19N20I - N-Channel MOSFET

Download the KF19N20I datasheet PDF. This datasheet also covers the KF19N20D variant, as both devices belong to the same n-channel mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for LED Lighting and switching mode power supplies.

Key Features

  • VDSS(Min. )= 200V, ID= 15A Drain-Source ON Resistance : RDS(ON)=0.155 Qg(typ. ) =21nC (max) @VGS =10V.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (KF19N20D-KEC.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number KF19N20I
Manufacturer KEC
File Size 556.03 KB
Description N-Channel MOSFET
Datasheet download datasheet KF19N20I Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for LED Lighting and switching mode power supplies. FEATURES VDSS(Min.)= 200V, ID= 15A Drain-Source ON Resistance : RDS(ON)=0.155 Qg(typ.) =21nC (max) @VGS =10V MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Gate-Source Voltage VDSS VGSS 200 30 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation TC=25 Derate above25 ID IDP EAS EAR dv/dt PD 15 9.4 45* 215 4.9 4.5 83.3 0.