GENERAL DESCRIPTION
FEATURES
VDSS= 600V, ID= 1A RDS(ON)=10 (Max) @VGS = 10V Qg(typ) = 4.0nC EAS=45mJ MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage VDSS Gate-Source Voltage VGSS @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) ID IDP EAS EAR dv/dt Drain Power Dissipation Tc=25 Derate above 25 PD Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Tj Tstg Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-toAmbient RthJC RthJA RATING 600 30 1.0 0.63 2.0 45 2 4.5 28 0.22 150 -55 150 4.5 110 UNIT V V A mJ mJ V/ns W W/ /W /W KF1N60D A CD B H G FF J E K L N M DIM MILLIMETERS A 6.60 +_ 0.20 B 6.10 +_0.20 C 5.34 +_ 0.30 D 0.70 +_0.20 E 2.70 +_ 0.15 F 2.30 +_ 0.10 G 0.96 MAX H 0.90 MAX J 1.80 +_0.20 K 2.30 +_0.10 L 0.50 +_ 0.10 M 0.50 +_0.10 N 0.70 MIN O 0.1 MAX 123 O 1. GATE 2. DRAIN 3. SOURCE DPAK (1) KF1N60I AH CJ BD M N G FF 123 K E P L 1.
KEC
