GENERAL DESCRIPTION
FEATURES
VDSS= 600V, ID= 0.5A RDS(ON)=10 (Max) @VGS = 10V Qg(typ) = 4.0nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage VDSS Gate-Source Voltage VGSS TC=25 Drain Current TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation TC=25 Derate above 25 Ta=25 ID IDP EAS EAR dv/dt PD Maximum Junction Temperature Tj Storage Temperature Range Thermal Characteristics Tstg Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-toAmbient RthJC RthJA RATING 600 30 0.5 0.31 2.0 45 1.3 4.5 5.4 0.043 1 150 -55 150 23 125 UNIT V V A mJ mJ V/ns W W/ W /W /W O D BD P DEPTH:0.2 C Q K FF HH M EM 123 HL G JA R DIM MILLIMETERS A 7.20 MAX B 5.20 MAX C 0.60 MAX D 2.50 MAX E 1.15 MAX F 1.27 S G 1.70 MAX H 0.55 MAX J 14.00+_ 0.50 K 0.35 MIN L 0.75+_ 0.10 M4 N HO P 25 1.25 Φ1.50 Q 0.10 MAX R 12.50 +_ 0.50 S 1.00 NN 1. GATE 2. DRAIN 3. SOURCE TO-92L PIN CONNECTION D G S 2013.
KEC
