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KF3N50DZ - N-CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description

This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics.

It is mainly suitable for electronic ballast and switching mode power supplies.

Key Features

  • VDSS= 500V, ID= 2.5A Drain-Source ON Resistance : RDS(ON)=2.5 Qg(typ) = 7.50nC (Max) @VGS = 10V KF3N50DZ/IZ N.

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Datasheet Details

Part number KF3N50DZ
Manufacturer KEC
File Size 380.23 KB
Description N-CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet KF3N50DZ Datasheet

Full PDF Text Transcription (Reference)

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SEMICONDUCTOR TECHNICAL DATA General Description This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES VDSS= 500V, ID= 2.5A Drain-Source ON Resistance : RDS(ON)=2.5 Qg(typ) = 7.50nC (Max) @VGS = 10V KF3N50DZ/IZ N CHANNEL MOS FIELD EFFECT TRANSISTOR KF3N50DZ A CD B H G FF J E K L N M DIM MILLIMETERS A 6.60 +_ 0.20 B 6.10 +_0.20 C 5.34 +_ 0.30 D 0.70 +_0.20 E 2.70 +_ 0.15 F 2.30 +_0.10 G 0.96 MAX H 0.90 MAX J 1.80 +_0.20 K 2.30 +_0.10 L 0.50 +_ 0.10 M 0.50 +_0.10 N 0.