GENERAL DESCRIPTION
FEATURES
VDSS= 500V, ID= 5.0A Drain-Source ON Resistance : RDS(ON)=1.4 Qg(typ) = 12nC D N KF5N50P/F/PZ/FZ N CHANNEL MOS FIELD EFFECT TRANSISTOR KF5N50P, KF5N50PZ A O C F E G B Q I K P M L J H @VGS = 10V N MAXIMUM RATING (Tc=25 CHARACTERISTIC ) RATING SYMBOL VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg 83 0.66 150 -55 150 N N H DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B 1.3+0.1/-0.05 C _ 0.1 D 0.8 + _ 0.2 E 3.6 + _ 0.1 F 2.8 + 3.7 G H 0.5+0.1/-0.05 1.5 I _ 0.3 13.08 + J K 1.46 _ 0.1 1.4 + L _ 0.1 1.27+ M _ 0.2 2.54 + N _ 0.2 4.5 + O _ 0.2 2.4 + P _ 0.2 9.2 + Q KF5N50P KF5N50PZ 500 KF5N50F KF5N50FZ UNIT 1 2 3 1. GATE 2. DRAIN 3. SOURCE Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 V V 5.0* 2.9* 13* A S E G B F 30 5.0 2.9 13 270 TO-220AB A KF5N50F, KF5N50FZ C mJ mJ V/ns 41.5 0.33...
KEC
