KEC KF5N50FZA
This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies.KF5N50FZA Specifications
- Drain-Source Resistance : 1.4Ω
- Min Breakdown Voltage : 500V
- Terminals : 3
Source:
Octopart
| Part No. | KF5N50FZA |
|---|---|
| Datasheet | KF5N50FZA Download |
| Manufacturer |  KEC |
| Description | N CHANNEL MOS FIELD EFFECT TRANSISTOR |
| Buy | Stock & Price |
GENERAL DESCRIPTION
FEATURES
VDSS= 500V, ID= 5.0A Drain-Source ON Resistance : RDS(ON)=1.4 Qg(typ) = 12nC trr(typ) = 150ns (KF5N50FSA) trr(typ) = 300ns (KF5N50FZA) @VGS = 10V KF5N50FZA/FSA N CHANNEL MOS FIELD EFFECT TRANSISTOR MAXIMUM RATING (Tc=25 ) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 Tj Tstg SYMBOL VDSS VGSS ID IDP EAS EAR dv/dt PD RATING 500 30 5.0* 2.9* 13* 270 UNIT V V A mJ mJ V/ns W W/ 8.6 20 37.9 0.30 150 -55 150 Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-toAmbient RthJC RthJA 3.3 62.5 /W /W * : Drain current limited by maximum junction temperature. PIN CONNECTION 2010. 8. 25 Revision No : 0 1/6 Datasheet pdf - KF5N50FZA/FSAELECTRICAL CHARACTERISTICS
(Tc=25 ) CHARACTERISTIC SYMBOL TEST CONDITION MIN.
