KF5N50FZA
Description
This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies. FEATURES
VDSS= 500V, ID= 5.0A Drain-Source ON Resistance : RDS(ON)=1.4 Qg(typ) = 12n C trr(typ) = 150ns (KF5N50FSA) trr(typ) = 300ns (KF5N50FZA) @VGS = 10V
KF5N50FZA/FSA
N CHANNEL MOS FIELD EFFECT TRANSISTOR
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 Tj Tstg SYMBOL VDSS VGSS ID IDP EAS EAR dv/dt PD RATING 500 30 5.0- 2.9- 13- 270
.Data Sheet.co.kr
UNIT V V
A m J m J V/ns W W/
8.6 20 37.9 0.30 150 -55 150
Maximum Junction Temperature Storage Temperature Range Thermal...
