GENERAL DESCRIPTION
FEATURES
VDSS=700V, ID=6A Drain-Source ON Resistance : RDS(ON)(Max)=1.65 @VGS=10V Qg(typ.)= 19nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Gate-Source Voltage VDSS VGSS 700 30 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 ID IDP EAS EAR dv/dt PD 6* 4* 15* 160 4.2 4.5 41 0.33 Maximum Junction Temperature Tj 150 Storage Temperature Range Thermal Characteristics Tstg -55 150 Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient RthJC RthJA 3.05 62.5 * : Drain current limited by maximum junction temperature. UNIT V V A mJ mJ V/ns W W/ /W /W Q KF6N70F N CHANNEL MOS FIELD EFFECT TRANSISTOR AC F O K E LM D NN 123 G B J R H 1. GATE 2. DRAIN 3. SOURCE DIM MILLIMETERS A 10.16 +_ 0.2 B 15.87 +_ 0.2 C 2.54 +_ 0.2 D 0.8 +_ 0.1 E 3.18 +_ 0.1 F 3.3 +_ 0.1 G 12.57 +_ 0.2 H 0...
KEC
