KF6N70I
Description
This planar stripe MOSFET has better characteristics, such as fast switching time, fast reverse recovery time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies.
FEATURES
VDSS= 700V, ID= 6A Drain-Source ON Resistance : RDS(ON)=1.65 Qg(typ) = 19n C
(Max) @VGS = 10V
MAXIMUM RATING (Tc=25 )
CHARACTERISTIC
SYMBOL
Drain-Source Voltage
VDSS
Gate-Source Voltage
VGSS
@TC=25
Drain Current @TC=100
Pulsed (Note1)
Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3)
ID IDP EAS EAR dv/dt
Drain Power Dissipation
Tc=25 Derate above 25
Maximum Junction Temperature Storage Temperature Range Thermal Characteristics
Tj Tstg
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to Ambient
Rth JC Rth JA
RATING 700 30 5.2 3.3 15 160
4.5 119 0.95 150 -55 150
1.05 110
UNIT V V
A m J m J V/ns W W/
/W...
