GENERAL DESCRIPTION
FEATURES
VDSS(Min.)= 500V, ID= 5.5A RDS(ON)=1.0 (Max) @VGS =10V Qg(typ.) =16nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC SYMBOL Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above25 VDSS VGSS ID IDP EAS EAR dv/dt PD RATING KF7N50D/I 500 30 5.5 3.5 21 180 4 4.5 69.4 0.56 Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Tj Tstg 150 -55 150 Thermal Resistance, Junction-to-Case RthJC Thermal Resistance, Junction-toAmbient RthJA * : Drain current limited by maximum junction temperature. 1.8 110 PIN CONNECTION D UNIT V V A mJ mJ V/ns W W/ /W /W KF7N50D/I N CHANNEL MOS FIELD EFFECT TRANSISTOR KF7N50D A CD H G FF B J E K L N M DIM MILLIMETERS A 6.60 +_ 0.20 B 6.10 +_ 0.20 C 5.34 +_ 0.30 D 0.70 +_ 0.20 E 2.70 +_ 0.15 F 2.30 +_ 0.10 G 0.96 MAX H 0.90 MAX J 1.80 +_0.20 K 2.30 +_0.10 L 0.50 +_ 0.10 M 0.50 +_ 0.10 N 0.70 MIN O 0.1 MAX 1 23 O 1.
KEC
