KF7N50F Datasheet PDF

KEC KF7N50F

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies.

Part No.	KF7N50F
Datasheet	KF7N50F Download
Manufacturer	KEC
Description	N-Channel MOSFET
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GENERAL DESCRIPTION

FEATURES

VDSS(Min.)= 500V, ID= 7A RDS(ON)=1.0 (Max) @VGS =10V Qg(typ.) =16nC MAXIMUM RATING (Tc=25 ) CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above25 SYMBOL VDSS VGSS ID RATING KF7N50P KF7N50F 500 30 7 7* 4.4 4.4* IDP 21 21* EAS 180 EAR 4 dv/dt 4.5 100 41.7 PD 0.8 0.33 Maximum Junction Temperature Storage Temperature Range Tj Tstg 150 -55 150 Thermal Characteristics Thermal Resistance, Junction-to-Case RthJC 1.25 Thermal Resistance, Junction-toAmbient RthJA 62.5 * : Drain current limited by maximum junction temperature. 3.0 62.5 UNIT V V A mJ mJ V/ns W W/ /W /W PIN CONNECTION KF7N50P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR KF7N50P DIM KF7N50F 2011. 6. 23 Revision No : 0 1/2 KF7N50P/F

ELECTRICAL CHARACTERISTICS

(Tc=25 ) CHARACTERISTIC SYMBOL TEST CONDITION Static...