KEC KF9N25D
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters and switching mode power supplies.KF9N25D Specifications
- Drain-Source Resistance : 400mΩ
- Min Breakdown Voltage : 250V
- Terminals : 2
Source:
Octopart
| Part No. | KF9N25D |
|---|---|
| Datasheet | KF9N25D Download |
| Manufacturer |  KEC |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
FEATURES
VDSS= 250V, ID= 7.5A Drain-Source ON Resistance : RDS(ON)=0.4 Qg(typ) = 14.5nC @VGS = 10V MAXIMUM RATING (Ta=25 ) CHARACTERISTIC SYMBOL RATING Drain-Source Voltage Gate-Source Voltage VDSS VGSS 250 30 @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 ID IDP EAS EAR dv/dt PD 7.5 4.74 25 126 4.0 4.5 54.3 0.43 Maximum Junction Temperature Storage Temperature Range Thermal Characteristics Tj Tstg 150 -55 150 Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-toAmbient RthJC RthJA 2.3 110 * : Drain current limited by maximum junction temperature. UNIT V V A mJ mJ V/ns W W/ /W /W A CD B H G FF J E 123 O K L N M DIM MILLIMETERS A 6.60 +_ 0.20 B 6.10 +_0.20 C 5.34 +_ 0.30 D 0.70 +_ 0.20 E 2.70 +_ 0.15 F 2.30 +_ 0.10 G 0.96 MAX H 0.90 MAX J 1.80 +_0.20 K 2.30 +_0.10 L 0.50 +_ 0.10 M 0.50 +_0.10 N 0.70 MIN O 0.1 MAX 1.
