KEC KF9N25P
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC Converters and switching mode power supplies.| Part No. | KF9N25P |
|---|---|
| Datasheet | KF9N25P Download |
| Manufacturer |  KEC |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
GENERAL DESCRIPTION
FEATURES
VDSS= 250V, ID= 9.0A Drain-Source ON Resistance : RDS(ON)=0.4 Qg(typ) = 14.5nC D N N A KF9N25P/F N CHANNEL MOS FIELD EFFECT TRANSISTOR KF9N25P O C F E G B Q I K P M L J H @VGS = 10V MAXIMUM RATING (Ta=25 ) RATING CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 Tj Tstg SYMBOL KF9N25P VDSS VGSS ID IDP EAS EAR dv/dt PD 83 0.67 150 -55 150 9.0 5.65 25 180 4.0 4.5 38 0.3 250 30 9.0* 5.65* 25* A C DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B 1.3+0.1/-0.05 C _ 0.1 D 0.8 + _ 0.2 E 3.6 + _ 0.1 F 2.8 + 3.7 G H 0.5+0.1/-0.05 1.5 I _ 0.3 13.08 + J K 1.46 _ 0.1 1.4 + L _ 0.1 1.27+ M _ 0.2 2.54 + N _ 0.2 4.5 + O _ 0.2 2.4 + P _ 0.2 9.2 + Q UNIT KF9N25F V V 1 2 3 1. GATE 2. DRAIN 3. SOURCE TO-220AB A KF9N25F F mJ mJ V/ns W W/ K E O DIM B MILLIMETERS Storage Temperature...
