KEC KHB011N40F1
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switching mode power supplies.| Part No. | KHB011N40F1 |
|---|---|
| Datasheet | KHB011N40F1 Download |
| Manufacturer |  KEC |
| Description | High Voltage MOSFETs |
| Buy | Stock & Price |
GENERAL DESCRIPTION
KHB011N40P1/F1 N CHANNEL MOS FIELD EFFECT TRANSISTOR A O C F E G B Q IFEATURES
VDSS(Min.)= 400V, ID= 10.5A Drain-Source ON Resistance : RDS(ON)=0.53 @VGS =10V Qg(typ.) =32.5nC K M L J D N N P H 1 2 3 DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B 1.3+0.1/-0.05 C _ 0.1 D 0.8 + _ 0.2 E 3.6 + _ 0.1 F 2.8 + 3.7 G H 0.5+0.1/-0.05 1.5 I _ 0.3 13.08 + J K 1.46 _ 0.1 1.4 + L _ 0.1 1.27+ M _ 0.2 2.54 + N _ 0.2 4.5 + O _ 0.2 2.4 + P _ 0.2 9.2 + Q 1. GATE 2. DRAIN 3. SOURCE MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above25 ) RATING SYMBOL KHB011N40P1 KHB011N40F1 VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg 135 1.07 150 -55 150 10.5 6.6 42 360 13.5 4.5 44 0.35 400 30 10.5* 6.6* 42* mJ K TO-220AB UNIT V A C F O E G P V A B mJ V/ns W W/ L J D M M H Q DIM MILLIME...
