KEC KHB019N20F1
This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for DC/DC converters and switching mode power supplies.| Part No. | KHB019N20F1 |
|---|---|
| Datasheet | KHB019N20F1 Download |
| Manufacturer |  KEC |
| Description | High Voltage MOSFETs |
| Buy | Stock & Price |
GENERAL DESCRIPTION
KHB019N20P1/F1 N CHANNEL MOS FIELD EFFECT TRANSISTOR A O C F E G B Q IFEATURES
VDSS=200V, ID=19A Drain-Source ON Resistance : RDS(ON)=0.18 Qg(typ.)=35nC @VGS = 10V K M L J D N N P H 1 2 3 DIM MILLIMETERS _ 0.2 9.9 + A 15.95 MAX B 1.3+0.1/-0.05 C _ 0.1 D 0.8 + _ 0.2 E 3.6 + _ 0.1 F 2.8 + 3.7 G H 0.5+0.1/-0.05 1.5 I _ 0.3 J 13.08 + K 1.46 _ 0.1 1.4 + L _ 0.1 1.27+ M _ 0.2 2.54 + N _ 0.2 4.5 + O _ 0.2 2.4 + P _ 0.2 9.2 + Q MAXIMUM RATING (Tc=25 CHARACTERISTIC Drain-Source Voltage Gate-Source Voltage @TC=25 Drain Current @TC=100 Pulsed (Note1) Single Pulsed Avalanche Energy (Note 2) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Drain Power Dissipation Tc=25 Derate above 25 ) RATING SYMBOL KHB019N20P1 KHB019N20F1 VDSS VGSS ID IDP EAS EAR dv/dt PD Tj Tstg RthJC RthCS RthJA 140 1.12 150 -55 150 19 12.1 76 250 14 4.5 50 0.4 200 30 19* 12.1* 76* F 1. GATE 2. DRAIN 3. SOURCE UNIT V V TO-220AB A A C mJ mJ O E G P B V/ns K W L W/ D M M J Q Maximum Jun...
