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KHB9D5N20F1 - (KHB9D5N20F1/F2/P1) N CHANNEL MOS FIELD EFFECT TRANSISTOR

Description

This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics.

Features

  • VDSS=200V, ID=9.5A Drain-Source ON Resistance : RDS(ON)=400m Qg(typ. )=18.5nC @VGS = 10V 15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + 1.46 _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 4.5 + 0.2 _ 0.2 2.4 + _ 0.2 9.2 + 1. GATE 2. DRAIN 3. SOURCE P Q TO-220AB.

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Datasheet Details

Part number KHB9D5N20F1
Manufacturer KEC
File Size 526.19 KB
Description (KHB9D5N20F1/F2/P1) N CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet KHB9D5N20F1 Datasheet

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Full PDF Text Transcription

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www.DataSheet4U.com SEMICONDUCTOR TECHNICAL DATA KHB9D5N20P1/F1/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description A KHB9D5N20P1 O C F E G B Q I K M L J D N N H P DIM MILLIMETERS _ 0.2 9.9 + A B C D E F G H I J K L M N O 1 2 3 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switch mode power supplies. FEATURES VDSS=200V, ID=9.5A Drain-Source ON Resistance : RDS(ON)=400m Qg(typ.)=18.5nC @VGS = 10V 15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + 1.46 _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 4.5 + 0.2 _ 0.2 2.4 + _ 0.2 9.2 + 1. GATE 2. DRAIN 3.
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