Datasheet4U Logo Datasheet4U.com

KHB9D5N20P - N CHANNEL MOS FIELD EFFECT TRANSISTOR

Description

KHB9D5N20P/F/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB9D5N20P A O C F E G B Q I K M L J D N N H P DIM MILLIMETERS _ 0.2 9.9 + A B C D E F G H I J K L M N O 1 2 3 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent

Features

  • VDSS=200V, ID=9.5A Drain-Source ON Resistance : RDS(ON)=400m Qg(typ. )=18.5nC @VGS = 10V 15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + 1.46 _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 4.5 + 0.2 _ 0.2 2.4 + _ 0.2 9.2 + 1. GATE 2. DRAIN 3. SOURCE P Q TO-220AB.

📥 Download Datasheet

Datasheet Details

Part number KHB9D5N20P
Manufacturer KEC
File Size 106.57 KB
Description N CHANNEL MOS FIELD EFFECT TRANSISTOR
Datasheet download datasheet KHB9D5N20P Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
KHB9D0N50F1 (KHB9D0N50F1 / KHB9D0N50P1) High Voltage MOSFETs KEC semiconductor
KHB9D0N50P1 (KHB9D0N50F1 / KHB9D0N50P1) High Voltage MOSFETs KEC semiconductor
KHB011N40F1 High Voltage MOSFETs KEC semiconductor
KHB011N40P1 High Voltage MOSFETs KEC semiconductor
KHB019N20F1 High Voltage MOSFETs KEC semiconductor

Other Datasheets by KEC

Part Number Description
KHB9D5N20P1 (KHB9D5N20F1/F2/P1) N CHANNEL MOS FIELD EFFECT TRANSISTOR
KHB9D5N20F N CHANNEL MOS FIELD EFFECT TRANSISTOR
KHB9D5N20F1 (KHB9D5N20F1/F2/P1) N CHANNEL MOS FIELD EFFECT TRANSISTOR
KHB9D5N20F2 (KHB9D5N20F1/F2/P1) N CHANNEL MOS FIELD EFFECT TRANSISTOR
KHB9D5N20F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR

Full PDF Text Transcription

Click to expand full text
SEMICONDUCTOR TECHNICAL DATA General Description KHB9D5N20P/F/F2 N CHANNEL MOS FIELD EFFECT TRANSISTOR KHB9D5N20P A O C F E G B Q I K M L J D N N H P DIM MILLIMETERS _ 0.2 9.9 + A B C D E F G H I J K L M N O 1 2 3 This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and switch mode power supplies. FEATURES VDSS=200V, ID=9.5A Drain-Source ON Resistance : RDS(ON)=400m Qg(typ.)=18.5nC @VGS = 10V 15.95 MAX 1.3+0.1/-0.05 _ 0.1 0.8 + _ 0.2 3.6 + _ 0.1 2.8 + 3.7 0.5+0.1/-0.05 1.5 _ 0.3 13.08 + 1.46 _ 0.1 1.4 + _ 0.1 1.27 + _ 0.2 2.54 + _ 4.5 + 0.2 _ 0.2 2.4 + _ 0.2 9.2 + 1. GATE 2. DRAIN 3.
Published: |